SKM400GB12T4 1200V 400A Dual IGBT Module TRENCHSTOP™ IGBT4 Low VCE(sat) 1.75V 10μs SC Capability CAL Diode Low Switching Losses SEMITRANS3 UL Certified for High-Power Drives

SKM400GB12T4 1200V 400A Dual IGBT Module TRENCHSTOP™ IGBT4 Low VCE(sat) 1.75V 10μs SC Capability CAL Diode Low Switching Losses SEMITRANS3 UL Certified for High-Power Drives

Features

• 1200V collector-emitter voltage (VCES) with 400A nominal collector current (616A maximum)

• 4th generation fast trench IGBT4 technology (Infineon) for low VCE(sat) and fast switching

• CAL4 soft-switching 4th generation diodes for improved efficiency and low EMI

• Isolated copper baseplate using DBC technology for excellent thermal dissipation

• Integrated gate resistor for simplified circuit design

• 10µs short-circuit withstand capability for robust operation

• UL recognized (File No. E63532) for industrial safety compliance

• Operating temperature range: -40°C to +175°C

Applications 

• AC inverter drives and industrial motor controls

• Uninterruptible Power Supplies (UPS) systems

• Electronic welders operating at switching frequencies up to 20kHz

• Solar inverters and renewable energy systems

• High-power converters and industrial power supplies

Description

The SKM400GB12T4 is a 1200V, 400A dual IGBT power module from SEMIKRON-Danfoss, part of the SEMITRANS® 3 series. It features 4th generation fast trench IGBT4 technology from Infineon combined with soft-switching CAL4 diodes in a half-bridge topology . The module incorporates an isolated copper baseplate using DBC (Direct Bonded Copper) technology with an integrated gate resistor, enabling reliable operation at switching frequencies up to 20kHz

INFORMATION

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