IS61WV102416BLL-10TLI 1Mx16 High-Speed 10ns SRAM 3.3V Operation Low Power Industrial Temp (-40°C to +85°C) 48-ball BGA Package Asynchronous Operation High Reliability Data Retention

IS61WV102416BLL-10TLI 1Mx16 High-Speed 10ns SRAM 3.3V Operation Low Power Industrial Temp (-40anddeg;C to +85anddeg;C) 48-ball BGA Package Asynchronous Operation High Reliability Data Retention

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FEATURES

andbull; High-speed access times: 8, 10, 20 ns

andbull; High-performance, low-power CMOS process

andbull; Multiple center power and ground pins for greaterandnbsp;noise immunity

andbull; Easy memory expansion with CE and OE op tions

andbull; CE power-down

andbull; Fully static operation: no clock or refresh required

andbull; TTL compatible inputs and outputs

andbull; Single power supply

andnbsp; Vdd 1.65V to 2.2V (IS61WV102416ALL)

andnbsp; speed = 20ns for

andnbsp; Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV102416BLL)

andnbsp; speed = 10ns for Vdd 2.4V to 3.6V

andnbsp; speed = 8ns for Vdd 3.3V + 5%

andbull; Packages available:

andnbsp; andndash; 48-ball miniBGA (9mm x 11mm)

andnbsp; andndash; 48-pin TSOP (Type I)

andbull; Industrial and Automotive Temperature Support

andbull; Lead-free available

andbull; Data control for upper and lower bytes

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Applications

1:Industrial Automation (PLCs, robotics)

2:Automotive Electronics (ECUs, ADAS)

3:Networking Equipment (routers, switches)

4:Embedded Systems (audio/video processing, aerospace)

5:High-Speed Data Buffering/Caching

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Description

The ISSI IS61WV102416ALL/BLL and IS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIand#39;s high-perfor mance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be re duced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

The device is packaged in the JEDEC standard 48-pin TSOP Type I and 48-pin Mini BGA (9mm x 11mm).

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INFORMATION

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Drawing

Our advantage :phones, PDAand#39;s, notebook comput.ers

• High quality products --- our offers are 100% new and original, ROHS
• Competitive price --- good Purchase channels with good price.
• Professional service --- strict quality testing before the shipment, and perfect after-sales service after the purchase.
• Adequate inventory --- With the support of our strong Purchasing team,
• Fast delivery --- we will ship the goods within 1-3 working days after the payment confirmed.

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