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BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection

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BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection

BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection
BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection

Large Image :  BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection

Product Details:
Place of Origin: China
Brand Name: ON Semiconductor
Certification: CE, GCF, ROHS
Model Number: BSS123LT1G
Payment & Shipping Terms:
Minimum Order Quantity: 1
Price: Negotiable
Packaging Details: Packed in original tray firstly ,then carton, at last Bubble bag for outer packing
Delivery Time: 3-5 working days after received the payment
Payment Terms: T/T, Western Union,
Supply Ability: 1000pcs per month
Detailed Product Description
Function: Step-Up, Step-Down Output Configuration: Positive Or Negative
Topology: Buck, Boost Output Type: Adjustable
Number Of Outputs: 1

BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection

 

Features

•HBM Class 0A, MM Class M1B (Note 4)

•BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

•These Devices are Pb−Free and are RoHS Compliant

 

Applications

  • Load Switching: Controlling power on/off for sections of a circuit.

  • Level Shifting: Converting signals between circuits of different voltage domains (e.g., converting a 3.3V signal to 5V).

  • LED Driving: Acting as a switch to control LED on/off states or for simple PWM dimming.

  • Logic Interface Buffering/Driving: Enhancing the driving capability of microcontroller GPIO pins to drive larger loads.

  • High-Speed Switching: Used in secondary-side synchronous rectification in switch-mode power supplies, DC-DC converters (low power).

  • Consumer Electronics: Portable devices like mobile phones, tablets, digital cameras.

  • Automotive Electronics: Body control modules, sensor interfaces, etc. (Note: Verify if the specific part is AEC-qualified; the BSS123LT1G is typically industrial/commercial grade).

 

Description

1:Low Threshold Voltage (Vgs(th)): Typically between 1.6V and 2.1V, meaning it can be driven directly by low voltages (e.g., 3.3V or even 2.5V

GPIO from a microcontroller), making it ideal for logic-level applications.

2:Low On-Resistance (RDS(on)): Maximum of only 6Ω at 10V Vgs and 10Ω at 4.5V Vgs. A lower RDS(on) means less power loss and voltage

drop when switched on, leading to higher efficiency.

3:Small Package (SOT-23): Very small footprint, saving PCB space, ideal for modern compact electronics.

4:High-Speed Switching Performance: Features fast switching speeds, suitable for applications requiring frequent switching, such as PWM

control.

5:Continuous Drain Current (Id): Up to 170mA, suitable for controlling small loads like LEDs, small relays, motors, etc.

6:Drain-Source Voltage (Vdss): Maximum of 100V, allowing its use in circuits with relatively higher voltages.

 

INFORMATION

Category
Mfr
Series
-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.6V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
225mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
Base Product Number

 

Drawing

BSS123LT1G N-Channel MOSFET Low 170mΩ RDS(on) 20V VDS 100V Avalanche Rated Ideal for low power switching load switching and DC-DC conversion with its SOT-23 package and ESD protection 0

Our advantage :phones, PDA's, notebook comput.ers

  • High quality products --- our offers are 100% new and original, ROHS
  • Competitive price --- good Purchase channels with good price.
  • Professional service --- strict quality testing before the shipment, and perfect after-sales service after the purchase.
  • Adequate inventory --- With the support of our strong Purchasing team,
  • Fast delivery --- we will ship the goods within 1-3 working days after the payment confirmed.

 

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