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SSM3K361R,LF N-Channel 20V 3A MOSFET with Ultra-Low 40mΩ RDS(on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Control for Compact Designs

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SSM3K361R,LF N-Channel 20V 3A MOSFET with Ultra-Low 40mΩ RDS(on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Control for Compact Designs

Large Image : SSM3K361R,LF N-Channel 20V 3A MOSFET with Ultra-Low 40mΩ RDS(on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Control for Compact Designs

Product Details:

Place of Origin:	China
Brand Name:	Toshiba
Certification:	CE, GCF, ROHS
Model Number:	SSM3K361R,LF

Payment & Shipping Terms:

Minimum Order Quantity:	1
Price:	Negotiable
Packaging Details:	Packed in original tray firstly ,then carton, at last Bubble bag for outer packing
Delivery Time:	3-5 working days after received the payment
Payment Terms:	T/T, Western Union,
Supply Ability:	1000pcs per month

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Detailed Product Description

Function:	Step-Up, Step-Down	Output Configuration:	Positive Or Negative
Topology:	Buck, Boost	Output Type:	Adjustable
Number Of Outputs:	1

SSM3K361R,LF N-Channel 20V 3A MOSFET with Ultra-Low 40mΩ RDS(on) SOT-23 Package High Power Density Superior Efficiency Fast Switching and Logic Level Control for Compact Designs

Features

AEC-Q101 qualified (Please see the orderable part number list)

175℃ MOSFET

4.5 V drive

Low drain-source on-resistance :

RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V)

RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V)

Applications

• Power Management Switches

• DC-DC Converters

Description

SSM3K361R,LF is a N-channel enhancement mode field effect transistor (MOSFET) designed in a compact SOT-23 surface mount package. It is engineered to provide high efficiency and power density in a minimal board space, making it an ideal solution for a wide range of power management and switching applications in portable and space-constrained electronic devices.

INFORMATION

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	69mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	3.2 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	430 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.2W (Ta)
Operating Temperature	175°C
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23F
Package / Case	SOT-23-3 Flat Leads
Base Product Number	SSM3K361

Drawing

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