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SI2304DS,215 N-Channel 20V 3.7A MOSFET with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs

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SI2304DS,215 N-Channel 20V 3.7A MOSFET with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs

Large Image : SI2304DS,215 N-Channel 20V 3.7A MOSFET with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs

Product Details:

Place of Origin:	China
Brand Name:	NXP Semiconductors
Certification:	CE, GCF, ROHS
Model Number:	SI2304DS,215

Payment & Shipping Terms:

Minimum Order Quantity:	1
Price:	Negotiable
Packaging Details:	Packed in original tray firstly ,then carton, at last Bubble bag for outer packing
Delivery Time:	3-5 working days after received the payment
Payment Terms:	T/T, Western Union,
Supply Ability:	1000pcs per month

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Detailed Product Description

Function:	Step-Up, Step-Down	Output Configuration:	Positive Or Negative
Topology:	Buck, Boost	Output Type:	Adjustable
Number Of Outputs:	1

SI2304DS,215 N-Channel 20V 3.7A MOSFET with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs

Features

TrenchMOS™ technology

Very fast switching

Subminiature surface mount package.

Applications

Battery management

High speed switch

Low power DC to DC converter.

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology

Product availability: SI2304DS in SOT23.

INFORMATION

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Nexperia USA Inc.
Series	TrenchMOS™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	117mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	4.6 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	195 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	830mW (Tc)
Operating Temperature	-65°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3

Drawing

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Function: Step-Up, Step-Down