TAJB475K016RNJ 16V 475A Low Rds(on) TO-263 Package High Power Density Reliable Performance Efficient Thermal Management Ideal for Automotive & Industrial Applications

TAJB475K016RNJ 16V 475A Low Rds(on) TO-263 Package High Power Density Reliable Performance Efficient Thermal Management Ideal for Automotive & Industrial Applications

FEATURES

• General Purpose SMT Chip Tantalum Series

• 100% Surge Current Tested

• 17 Case Sizes Available, Standard and Low Profile Down to 1mm Maximum Height

• CV Range: 0.10 - 2200μF / 2.5 - 50V

• J-Lead Construction

APPLICATIONS

• General Low Power DC/DC and LDO

• Entertainment / Infotainment Systems

• Height Restricted Design

Description

The TAJB475K016RNJ is a high-performance N-channel power MOSFET in an advanced TO-263 (D2PAK) package, designed for demanding automotive and industrial applications.

Its core advantage is an extremely low on-resistance (Rds(on)), which significantly reduces power loss and heat generation, enabling high energy efficiency. The device boasts a high continuous drain current capability of 475A and a drain-source voltage of 16V, allowing it to handle high-power loads. Excellent thermal performance ensures reliability and a long service life, even under high-stress conditions.

This MOSFET is an ideal choice for motor control, power management, and various switching circuits, providing a robust and reliable solution for high-power-density designs.

INFORMATION

Drawing

Our advantage :

• High quality products --- our offers are 100% new and original, ROHS
• Competitive price --- good Purchase channels with good price.
• Professional service --- strict quality testing before the shipment, and perfect after-sales service after the purchase.
• Adequate inventory --- With the support of our strong Purchasing team,
• Fast delivery --- we will ship the goods within 1-3 working days after the payment confirmed.

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