IRFI4019HG-117P 190A Power MOSFET 100V Ultra-Low Rds(on) 1.9mΩ TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications

IRFI4019HG-117P 190A Power MOSFET 100V Ultra-Low Rds(on) 1.9mΩ TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications

Features

Integrated Half-Bridge Package

Reduces the Part Count by Half

Facilitates Better PCB Layout

Key Parameters Optimized for Class-D Audio Amplifier Applications

Low RDS(ON) for Improved Efficiency

Low Qg and Qsw for Better THD and Improved Efficiency

Low Qrr for Better THD and Lower EMI

Can Delivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier

Lead-Free Package

Halogen-Free

Applications

Description

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

INFORMATION

Drawing

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