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Dual N+P Channel IRF7420TRPBF ±5.3A 20V SOIC-8 0.045Ω Rds(on) 1.8V Logic Level Fast Switching High Efficiency Power Management Space-Saving Design

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Dual N+P Channel IRF7420TRPBF ±5.3A 20V SOIC-8 0.045Ω Rds(on) 1.8V Logic Level Fast Switching High Efficiency Power Management Space-Saving Design

Large Image : Dual N+P Channel IRF7420TRPBF ±5.3A 20V SOIC-8 0.045Ω Rds(on) 1.8V Logic Level Fast Switching High Efficiency Power Management Space-Saving Design

Product Details:

Place of Origin:	China
Brand Name:	Infineon
Certification:	CE, GCF, ROHS
Model Number:	IRF7420TRPBF

Payment & Shipping Terms:

Minimum Order Quantity:	1
Price:	Negotiable
Packaging Details:	Packed in original tray firstly ,then carton, at last Bubble bag for outer packing
Delivery Time:	3-5 working days after received the payment
Payment Terms:	T/T, Western Union,
Supply Ability:	1000pcs per month

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Detailed Product Description

Function:	Step-Up, Step-Down	Output Configuration:	Positive Or Negative
Topology:	Buck, Boost	Output Type:	Adjustable
Number Of Outputs:	1
Highlight:	Dual N+P Channel MOSFET 20V SOIC-8 , Logic Level Fast Switching Power MOSFET , High Efficiency Power Management IC

Dual N+P Channel IRF7420TRPBF ±5.3A 20V SOIC-8 MOSFET

Key Specifications

Function	Step-Up, Step-Down
Output Configuration	Positive or Negative
Topology	Buck, Boost
Output Type	Adjustable
Number of Outputs	1

Product Description

This HEXFET® Power MOSFET features dual N+P channel configuration with ±5.3A current rating and 20V voltage in SOIC-8 package. With ultra-low 0.045Ω Rds(on) and 1.8V logic level, it offers fast switching and high efficiency for power management applications while saving space.

Features

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free

Applications

Power Management Modules (PMIC): Used in motherboards, servers, network equipment, and portable electronics as load switches and in DC-DC converters.
Motor Drive and Control: Ideal for driving small to medium-power DC motors in robotics and automated equipment.
Battery-Powered Devices: Used in smartphones, tablets, and medical devices for battery protection and management.
Signal Switching & Multiplexing: Applicable for routing signals in test equipment and data acquisition systems.

Technical Specifications

Category	Discrete Semiconductor Products > Transistors > FETs, MOSFETs
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	14mOhm @ 11.5A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	3529 pF @ 10 V
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)
Base Product Number	IRF7420

Product Drawings

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