FM24CL64B-GTR 64Kb I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp & 8-lead TSSOP

FM24CL64B-GTR 64Kb I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp & 8-lead TSSOP

Features

■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8

  ❐ High-endurance 100 trillion (1014) read/writes

  ❐ 151-year data retention (See Data Retention and Endurance on page 10)

  ❐ NoDelay™ writes

  ❐ Advanced high-reliability ferroelectric process

■ Fast 2-wire Serial interface (I2C)

  ❐ Up to 1-MHz frequency

  ❐ Direct hardware replacement for serial (I2C) EEPROM

  ❐ Supports legacy timings for 100 kHz and 400 kHz

■ Low power consumption

  ❐ 100 A (typ) active current at 100 kHz

  ❐ 3 A (typ) standby current

■ Voltage operation: VDD = 2.7 V to 3.65 V

■ Industrial temperature: –40 C to +85 C

■ Packages

  ❐ 8-pin small outline integrated circuit (SOIC) package

  ❐ 8-pin thin dual flat no leads (DFN) package

■ Restriction of hazardous substances (RoHS) compliant

Applications

Industrial Automation

Real-time data logging (e.g., sensor logs, equipment status)

Production line parameter storage (supports high-frequency writes)

Fault protection (saving critical data during sudden power loss)

Smart Meters

Energy measurement data storage (supports thousands of daily writes)

Tariff change logs

Tamper-proof event recording

Automotive Electronics

Driving data recording (black box)

ECU parameter storage

Mileage and maintenance information

Medical Devices

Patient monitoring data logging

Equipment usage logs

Calibration parameter storage

IoT Devices

Edge computing data buffering

Firmware update backup

Configuration parameter storage

Consumer Electronics

Smart appliance state memory

Wearable device activity tracking

Real-time game progress saving

Description

The FM24CL64B is a 64-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories.

Unlike EEPROM, the FM24CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24CL64B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM.

These capabilities make the FM24CL64B ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.

The FM24CL64B provides substantial benefits to users of serial (I2C) EEPROM as a hardware drop-in replacement. The device specifications are guaranteed over an industrial temperature range of –40 C to +85 C.

INFORMATION

Drawing

Our advantage :

• High quality products --- our offers are 100% new and original, ROHS
• Competitive price --- good Purchase channels with good price.
• Professional service --- strict quality testing before the shipment, and perfect after-sales service after the purchase.
• Adequate inventory --- With the support of our strong Purchasing team,
• Fast delivery --- we will ship the goods within 1-3 working days after the payment confirmed.

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