NDS331N 20V N-Channel MOSFET 1.6A Continuous 0.25andOmega; Rds(on) SOT-23 1.8V Logic Level -55anddeg;C to +150anddeg;C
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Features
andnbsp;1.3 A, 20 V
andnbsp;RDS(on) = 0.21 @ VGS = 2.7 V
andnbsp;RDS(on) = 0.16 @ VGS = 4.5 V
andnbsp;Industry Standard Outline SOTandminus;23 Surface Mount Package Using Proprietary SUPERSOT andminus;3 Design for Superior Thermal and Electrical Capabilities
andnbsp;High Density Cell Design for Extremely Low RDS(on)
andnbsp;Exceptional Onandminus;Resistance and Maximum DC Current Capability
andnbsp;This is a Pbandminus;Free Device
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General Description
These Nandminus;Channel logic level enhancement mode power field effect transistors are produced using onsemiandrsquo;s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onandminus;state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low inandminus;line power loss are needed in a very small outline surface mount package.
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APPLICATIONS
Portable Electronics
Load switching: Power management in smartphones, TWS earphones
Battery Protection: Acts as switch in charge/discharge paths (supports 1.6A continuouscurrent).
Low-Power DC-DC Conversion
Synchronous Rectification: Paired with Buck/Boost chips (e.g., TPS61093) to improveefficiency via 0.250 Rds(on).
Level shifting: Compatible with 1.8V/3.3V/5V logic systems for signal isolation.
Sensor andamp; Signal Processing
Sensor Power switching: Energy-saving control for temp/humidity sensors, optical modules.
Analog switching: Replaces mechanical relays in low-voltage (andlt;20V) signal paths.
Industrial Control
PLC l/O Interfaces: Drives LEDs or small relays (requires flyback diode).
Low-Side Switching: Controls fans, small motors, etc.
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INFORMATION
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Category
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Mfr
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Series
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Packaging
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Tape andamp; Reel (TR)
Cut Tape (CT)
Digi-Reelandreg;
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Part Status
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FET Type
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Technology
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Drain to Source Voltage (Vdss)
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Current - Continuous Drain (Id) @ 25anddeg;C
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Drive Voltage (Max Rds On, Min Rds On)
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Rds On (Max) @ Id, Vgs
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Vgs(th) (Max) @ Id
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Gate Charge (Qg) (Max) @ Vgs
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Vgs (Max)
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Input Capacitance (Ciss) (Max) @ Vds
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FET Feature
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Power Dissipation (Max)
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Operating Temperature
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-55anddeg;C ~ 150anddeg;C (TJ)
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Grade
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Qualification
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Mounting Type
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Supplier Device Package
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Package / Case
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Base Product Number
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Drawing
Our advantage :
- High quality products --- our offers are 100% new and original, ROHS
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- Professional service --- strict quality testing before the shipment, and perfect after-sales service after the purchase.
- Adequate inventory --- With the support of our strong Purchasing team,
- Fast delivery --- we will ship the goods within 1-3 working days after the payment confirmed.
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Product List
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